Advancing Complex Oxide Thin Films: Exploring New Dimensions in Material Science through Molecular-beam Epitaxy

In the cutting-edge field of materials science, the search for high-quality complex oxide epitaxial thin films is at the leading position of technological progress. This presentation describes the pioneering efforts and methodologies used in the molecular-beam epitaxy (MBE) technique, with a focus on the role of ozone-assisted growth in optimizing thin film properties. We explore the art of layered structure design and epitaxial growth by precisely controlling atomic beam flux, pushing the boundaries of materials engineering. Our findings highlight the first discovery of novel materials, paving the way for the artificial design of materials tailored to specific functionalities. Our approach is based on strategic manipulation of material functionality via band-gap engineering with abrupt interface control, and strain management with dimensionality regulation. These efforts are not purely theoretical; they are based on real-world applications that show the potential for significant technological advances in electronics and optoelectronics. Adsorption-controlled growth is a critical component of our methodology for maintaining precise stoichiometry in oxide semiconductors, which addresses continuing the challenge of material consistency. Furthermore, we investigate the use of unconventional flux sources, such as solid solution alkaline beam flux and sub-oxide beam flux, in order to achieve unparalleled material quality and performance. In this presentation, I will shed light on the sophisticated processes and novel strategies at the heart of complex oxide epitaxial thin film development. By harnessing the power of ozone-assisted MBE growth and addressing material design challenges, we are on the verge of unlocking new dimensions in material science, with far-reaching implications for future technological applications.