IAP Seminar (Interfacial Phenomena and next-generation devices)
Date : January 10, 2022 11:00 ~ 12:00
Speaker : Prof. Junwoo Park
Professor : Prof. Takhee Lee
Location : 56-521
Interfacial Phenomena and next-generation devices
In this seminar, I’ll be introducing the analysis of specific interfacial phenomena for the development of next-generation energy and electronic devices. I have demonstrated energy conversion devices which generates electricity from flowing droplets, water evaporation, and the infiltration of electrolyte into porous solid materials. The proposed devices have showed the possibility of generating electric energy in all areas of the global water circulation as next-generation energy devices. The interfacial phenomenon?which governs the working principle of the devices?is based on an interaction between ions in electrolyte and electrons (or holes) in high-resistive semiconductor, which we named ionovoltaic effect. The second problem the seminar addresses is the mechanism for the charge transport at molecular interface showing rectification and conductance switching at the same time which can potentially function as next-generation electronic devices?e.g., a selector-free molecular memory device or an artificial synapse (i.e., molecular memristor). The molecular interface is composed of alkanethiolates terminated by a bipyridine (BIPY) group complexed with transition metal ions on template-stripped gold with an eutectic indium-gallium alloy.
In this seminar, I’ll be introducing the analysis of specific interfacial phenomena for the development of next-generation energy and electronic devices. I have demonstrated energy conversion devices which generates electricity from flowing droplets, water evaporation, and the infiltration of electrolyte into porous solid materials. The proposed devices have showed the possibility of generating electric energy in all areas of the global water circulation as next-generation energy devices. The interfacial phenomenon?which governs the working principle of the devices?is based on an interaction between ions in electrolyte and electrons (or holes) in high-resistive semiconductor, which we named ionovoltaic effect. The second problem the seminar addresses is the mechanism for the charge transport at molecular interface showing rectification and conductance switching at the same time which can potentially function as next-generation electronic devices?e.g., a selector-free molecular memory device or an artificial synapse (i.e., molecular memristor). The molecular interface is composed of alkanethiolates terminated by a bipyridine (BIPY) group complexed with transition metal ions on template-stripped gold with an eutectic indium-gallium alloy.