IAP Seminar (Two-Dimensional Semiconductors for Next-Generation Optoelectronics)
Date : February 6, 2024 11:00 ~ 12:00
Speaker : Prof. Hyungjin Kim (Department of Materials Science and Engineering, Yonsei University)
Professor : Prof. Takhee Lee
Location : 56-521
Two-Dimensional Semiconductors for Next-Generation Optoelectronics
Two-dimensional (2D) semiconductors have been extensively studied in the exploration of new phenomena and properties that are not seen in conventional bulk semiconductors, especially for optoelectronic applications such as light-emitting diodes (LEDs) and photodetectors. However, one of the main constraints for the implementation of 2D transition metal dichalcogenide (TMDC) monolayers in practical applications is their low photoluminescence (PL) quantum yield (QY), which is reported in the range of 0.01 to 6% at room temperature. Here, 2D TMDC monolayers with near-unity PL QY were demonstrated at all exciton densities, which paves the way for developing LEDs that will retain high efficiency at all brightness [1]. Moreover, to address the fundamental limitations of bulk semiconductors with narrow bandgaps, the room-temperature infrared optoelectronic devices were developed whose operating wavelengths can be widely modulated by utilizing strain-tunable bandgap in black phosphorus [2].
[1] H. Kim, S. Z. Uddin, N. Higashitarumizu, E. Rabani, A. Javey, “Inhibited nonradiative decay at all exciton densities in monolayer semiconductors,” Science 373, 448-452 (2021).
[2] H. Kim, S. Z. Uddin, D.-H. Lien, M. Yeh, N. S. Azar, S. Balendhran, T. Kim, N. Gupta, Y. Rho, C. P. Grigoropoulos, K. B. Crozier, A. Javey, “Actively variable-spectrum optoelectronics with black phosphorus,” Nature 596, 232-237 (2021).
Two-dimensional (2D) semiconductors have been extensively studied in the exploration of new phenomena and properties that are not seen in conventional bulk semiconductors, especially for optoelectronic applications such as light-emitting diodes (LEDs) and photodetectors. However, one of the main constraints for the implementation of 2D transition metal dichalcogenide (TMDC) monolayers in practical applications is their low photoluminescence (PL) quantum yield (QY), which is reported in the range of 0.01 to 6% at room temperature. Here, 2D TMDC monolayers with near-unity PL QY were demonstrated at all exciton densities, which paves the way for developing LEDs that will retain high efficiency at all brightness [1]. Moreover, to address the fundamental limitations of bulk semiconductors with narrow bandgaps, the room-temperature infrared optoelectronic devices were developed whose operating wavelengths can be widely modulated by utilizing strain-tunable bandgap in black phosphorus [2].
[1] H. Kim, S. Z. Uddin, N. Higashitarumizu, E. Rabani, A. Javey, “Inhibited nonradiative decay at all exciton densities in monolayer semiconductors,” Science 373, 448-452 (2021).
[2] H. Kim, S. Z. Uddin, D.-H. Lien, M. Yeh, N. S. Azar, S. Balendhran, T. Kim, N. Gupta, Y. Rho, C. P. Grigoropoulos, K. B. Crozier, A. Javey, “Actively variable-spectrum optoelectronics with black phosphorus,” Nature 596, 232-237 (2021).