Clean room Lithography and milling machine
FE-SEM(Field Emission-Scanning Electron Microscope
| Model | MIRA3 XMH |
|---|---|
| Manufacturer (Country) | TESCAN (Czech Republic) |
| Purchase Date | 2013-08-09 |
| Purpose of Use | E-beam lithography, Image, EDS |
Product Description and Specifications● A microscope where a focused e-bean is scanned over the sample surface for image generation by collecting secondary electrons, with primary electrons refracted
● Equipped with EDS (energy dispersivespectrometer), enabling the analysis of the sample components and surface properties ● Resolution in high-vacuum mode: SE: 1.2nm at 30keV , STEM: 0.8nm at 30keV ● Resolution in low-vacuum mode: BSE: 2.0nm at 30keV ● Working vacuum ● Chamber high vacuum mode: <9*10^-3Pa ● Chamber low vacuum mode (available only for UniVac): 7-500Pa ● Gun vacuum: <3*10^-7Pa ● Electron optics working modes - high-vacuum mode: Resolution, Depth, Field, Wide field, channelling - low-vacuum mode: Resolution, Depth ● Magnification: continuous from: 1*1,000,000*(XM) (for 5“ image width in continual Wide field / Resolution mode) ● Field of view: 6.4mm at WD 10mm ● Accelerating / landing voltage: 200V to 30kV ● Electron gun: High brightness schottky Emitter ● Probe current: 2pA to 200nA ● Scanning speed: From 20ns to 10ms per pixel adjustable in steps or continuously |
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