Maskless Photo Lithography System

Clean room Lithography and milling machine

Model	DL-1000A1
Manufacturer (Country)	Nano System Solutions, Inc.
Purchase Date	2021-08-06
Purpose of Use	photo lithograpy (Light exposure equipment without photo-mask)
Product Description and Specifications Resolution: 1μm (Positive PR : t ≦ 1μm) Minimum pixel size: 1 μm # of DMD pixel: 1024×768 Exposure area for each shot: Horizontal 1.024 mm, Vertical 0.768 mm Maximum exposure area: 100 × 100 mm (limit of X/Y stage) Light source and Wavelength: LED、405 nm Exposure Power: 1.5 W/cm2 Write Speed: 570 mm2/min(@50 mJ/cm2) Positioning Accuracy: ±100nm Patterning method: Step & Repeat, Scanning Autofocus: Real time Image contrast method Autofocus range: ±200 μ Sample substrate Thickness: 7mm or less, Maxum Size: 100 x 100mm, 4inch wafer Thickness 는 0.5mm 이상 만 사용 (0.5mm 이하는 관리자에게 확인 필)

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