INSTITUTE OF APPLIED PHYSICS

List

Material Analysis Laboratory 1. Device Fabrication

Reactive Ion Etching

Model RIE-200ip
Manufacturer (Country) Samco
Purchase Date 2015-04-02
Purpose of Use Reactive Ion Etching

Product Description and Specifications

  • Plasma source type : Parallel plate plasma (CCP)
  • RF power supply : 13.56 MHz, 600W, Automatic matching
  • Vac. Chamber : aluminum chamber, anti-corrosion treated surface
  • RIE platen : water cooled, for Φ6“
  • aluminum chamber with view port
  • direct sample transfer under vacuum
  • Main chamber : low vacuum gauge and wide range gauge
  • Loadlock chamber : low vacuum gauge
  • Turbo molecular pump (300L/sec) backed up with mechanical pump (1000L/sec)
  • Base pressure : 1.0E-7TorrMass Flow controller (MFC) : BCl3, CF4, Ar, O2
  • Safety interlocked
  • pressure, self bias, RF power, Turbo speed and valve, and MFC status displays
RIE