INSTITUTE OF APPLIED PHYSICS

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Clean room Etching machine

XeF2 etcher

Model VPE-4F
Manufacturer (Country) SAMCO (Jap)
Purchase Date 2013-08-09
Purpose of Use A dry isotropic etching tool based on the mechanism that XeF2 sublimates at its vapor pressure and reacts with Si to form a gas-phase compound, which is removed from the surface, isotropically etching silicon.

Product Description and Specifications

● Multiple etching mode - pulse etch mode continuous flow mode
● A highly selective etch for silicon (Si:SiO2=1000:1)
● Isotropic etch enabling an undercut structure of ≥100um
● Stiction-free etch (no collapse of the suspended structure onto the substrate)
● Etching through pinholes with diameter down to 25nm
● Automated processing through LCD touchscreen
● 300cc XeF2 soruce bottle
● MEMS device fabrication technology can be applied to various heat strain testing systems, given its inherent high isotropic etch selectivity over etch mask, which enables the fabrication of suspended MEMS structure with a minimized risk of oxide film damage.
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