Clean room Etching machine
RIE(reactive ion etcher)
| Model | RIE-10NR |
|---|---|
| Manufacturer (Country) | SAMCO (Jap) |
| Purchase Date | 2019-04-05 |
| Purpose of Use | A device used in nanoscale processes with the following functions and characteristics: Selective dry etching by generating a chemically reactive plasma by applying RF frequency electromagnetic field; Capable of anisotropic etching, unlike wet etching processes which are mostly isotropic etching; Suitable for fabricating nanoscale devices overcoming the limit associated with etching bias; Free from damage likely to occur during the drying process after being taken from reagents; Mainly used for etching Si-based material layers; Applicable to a wide range of material types such as semiconductor materials, carbon-based materials such as graphene, dielectric materials, and organic materials. |
Product Description and SpecificationsRF Power Range : 30W ~ 270W ▶ Si etching Etch rate ≥ 30nm/min Etch ratio to photoresist of 1:1 or more selective. In-wafer uniformity† ≤ ±5% Reproducibility ≤ ±3% Profile control ≥ 85° ▶ SiO2 etching Etch rate ≥ 25nm/min Etch ratio to photoresist of 3:1 or more selective. Etch ratio to Si of 5:1 or more selective. In-wafer uniformity† ≤ ±4% Reproducibility ≤ ±3% Profile control ≥ 85° ▶ Si3N4 etching Etch rate ≥ 50nm/min Etch ratio to photoresist of 1.5:1 or more selective. Etch ratio to Si of 4:1 or more selective. In-wafer uniformity† ≤ ±5% Reproducibility ≤ ±3% Profile control ≥ 85° |
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